SI5913DC-T1-GE3
detaildesc

SI5913DC-T1-GE3

Vishay Siliconix

Product No:

SI5913DC-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

1206-8 ChipFET™

Batch:

-

Datasheet:

pdf

Description:

MOSFET P-CH 20V 4A 1206-8

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 84mOhm @ 3.7A, 10V
Supplier Device Package 1206-8 ChipFET™
Vgs(th) (Max) @ Id 1.5V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series LITTLE FOOT®
Power Dissipation (Max) 1.7W (Ta), 3.1W (Tc)
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI5913