SI5853CDC-T1-E3
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SI5853CDC-T1-E3

Vishay Siliconix

Product No:

SI5853CDC-T1-E3

Manufacturer:

Vishay Siliconix

Package:

1206-8 ChipFET™

Batch:

-

Datasheet:

pdf

Description:

MOSFET P-CH 20V 4A 1206-8

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 8 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 104mOhm @ 2.5A, 4.5V
Supplier Device Package 1206-8 ChipFET™
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series LITTLE FOOT®
Power Dissipation (Max) 1.5W (Ta), 3.1W (Tc)
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI5853