SI4925BDY-T1-GE3
Vishay Siliconix
Product No:
SI4925BDY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET 2P-CH 30V 5.3A 8-SOIC
Quantity:
Delivery:
Payment:
In Stock : 2500
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.558
$1.558
10
$1.3984
$13.984
100
$1.12404
$112.404
500
$0.923514
$461.757
1000
$0.765206
$765.206
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 P-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 10V |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain to Source Voltage (Vdss) | 30V |
| Series | TrenchFET® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Mfr | Vishay Siliconix |
| Package | Tape & Reel (TR) |
| Base Product Number | SI4925 |
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2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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