SI4464DY-T1-GE3
Vishay Siliconix
Product No:
SI4464DY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET N-CH 200V 1.7A 8SO
Quantity:
Delivery:
Payment:
In Stock : 397
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.273
$1.273
10
$1.14
$11.4
100
$0.889105
$88.9105
500
$0.734502
$367.251
1000
$0.57987
$579.87
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 2.2A, 10V |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain to Source Voltage (Vdss) | 200 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 1.5W (Ta) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI4464 |
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