SI4463BDY-T1-GE3
Vishay Siliconix
Product No:
SI4463BDY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET P-CH 20V 9.8A 8SO
Quantity:
Delivery:
Payment:
In Stock : 2460
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.463
$1.463
10
$1.3129
$13.129
100
$1.054975
$105.4975
500
$0.866761
$433.3805
1000
$0.718172
$718.172
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 13.7A, 10V |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Drain to Source Voltage (Vdss) | 20 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 1.5W (Ta) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±12V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI4463 |
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