SI4435DDY-T1-E3

Vishay Siliconix

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SI4435DDY-T1-E3

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Package:

8-SOIC

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Description:

MOSFET P-CH 30V 11.4A 8SO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 15 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	24mOhm @ 9.1A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchFET®
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.4A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI4435