SI3442BDV-T1-BE3

Vishay Siliconix

Product No:

SI3442BDV-T1-BE3

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Package:

6-TSOP

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Description:

N-CHANNEL 2.5-V (G-S) MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	295 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	57mOhm @ 4A, 4.5V
Supplier Device Package	6-TSOP
Vgs(th) (Max) @ Id	1.8V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	860mW (Ta)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)