SI2333CDS-T1-BE3

Vishay Siliconix

Product No:

SI2333CDS-T1-BE3

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Package:

SOT-23-3 (TO-236)

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Description:

P-CHANNEL 12-V (D-S) MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1225 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	35mOhm @ 5.1A, 4.5V
Supplier Device Package	SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	12 V
Series	-
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.1A (Ta), 7.1A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)