SI2319CDS-T1-BE3

Vishay Siliconix

Product No:

SI2319CDS-T1-BE3

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Package:

SOT-23-3 (TO-236)

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Description:

MOSFET P-CH 40V 3.1A/4.4A SOT23

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	595 pF @ 20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	77mOhm @ 3.1A, 10V
Supplier Device Package	SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	TrenchFET®
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta), 4.4A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI2319