SCTW90N65G2V

STMicroelectronics

Product No:

SCTW90N65G2V

Manufacturer:

Package:

HiP247™

Batch:

Datasheet:

Description:

SICFET N-CH 650V 90A HIP247

Quantity:

Delivery:

Payment:

In Stock : 2

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	25mOhm @ 50A, 18V
Supplier Device Package	HiP247™
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	390W (Tc)
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCTW90