SCTW70N120G2V
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SCTW70N120G2V

STMicroelectronics

Product No:

SCTW70N120G2V

Manufacturer:

STMicroelectronics

Package:

HiP247™

Batch:

-

Datasheet:

pdf

Description:

TRANS SJT N-CH 1200V 91A HIP247

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3540 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 18 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
Supplier Device Package HiP247™
Vgs(th) (Max) @ Id 4.9V @ 1mA
Drain to Source Voltage (Vdss) 1200 V
Series -
Power Dissipation (Max) 547W (Tc)
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 91A (Tc)
Mfr STMicroelectronics
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number SCTW70