SCTH90N65G2V-7
detaildesc

SCTH90N65G2V-7

STMicroelectronics

Product No:

SCTH90N65G2V-7

Manufacturer:

STMicroelectronics

Package:

H2PAK-7

Batch:

-

Datasheet:

pdf

Description:

SICFET N-CH 650V 90A H2PAK-7

Quantity:

Delivery:

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Payment:

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In Stock : 67

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $33.63

    $33.63

  • 10

    $29.88225

    $298.8225

  • 100

    $26.13621

    $2613.621

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
Supplier Device Package H2PAK-7
Vgs(th) (Max) @ Id 5V @ 1mA
Drain to Source Voltage (Vdss) 650 V
Series -
Power Dissipation (Max) 330W (Tc)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Mfr STMicroelectronics
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tape & Reel (TR)
Base Product Number SCTH90