SCTH100N65G2-7AG
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SCTH100N65G2-7AG

STMicroelectronics

Product No:

SCTH100N65G2-7AG

Manufacturer:

STMicroelectronics

Package:

H2PAK-7

Batch:

-

Datasheet:

pdf

Description:

SICFET N-CH 650V 95A H2PAK-7

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3315 pF @ 520 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 18 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
Supplier Device Package H2PAK-7
Vgs(th) (Max) @ Id 5V @ 5mA
Drain to Source Voltage (Vdss) 650 V
Series Automotive, AEC-Q101
Power Dissipation (Max) 360W (Tc)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 95A (Tc)
Mfr STMicroelectronics
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tape & Reel (TR)
Base Product Number SCTH100