SCT30N120
detaildesc

SCT30N120

STMicroelectronics

Product No:

SCT30N120

Manufacturer:

STMicroelectronics

Package:

HiP247™

Batch:

-

Datasheet:

pdf

Description:

SICFET N-CH 1200V 40A HIP247

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Supplier Device Package HiP247™
Vgs(th) (Max) @ Id 2.6V @ 1mA (Typ)
Drain to Source Voltage (Vdss) 1200 V
Series -
Power Dissipation (Max) 270W (Tc)
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Mfr STMicroelectronics
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCT30