PXN012-60QLJ

Nexperia USA Inc.

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PXN012-60QLJ

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Package:

MLPAK33

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Description:

PXN012-60QL/SOT8002/MLPAK33

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	957 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18.77 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	11.5mOhm @ 10A, 10V
Supplier Device Package	MLPAK33
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	34.7W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)