PSMN9R1-30YL,115

Nexperia USA Inc.

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PSMN9R1-30YL,115

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Package:

LFPAK56, Power-SO8

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Description:

MOSFET N-CH 30V 57A LFPAK56

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	894 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.7 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	9.1mOhm @ 15A, 10V
Supplier Device Package	LFPAK56, Power-SO8
Vgs(th) (Max) @ Id	2.15V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchMOS™
Power Dissipation (Max)	52W (Tc)
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	57A (Tc)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PSMN9R1