PSMN6R3-120ESQ
detaildesc

PSMN6R3-120ESQ

Nexperia USA Inc.

Product No:

PSMN6R3-120ESQ

Manufacturer:

Nexperia USA Inc.

Package:

I2PAK

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 120V 70A I2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 439

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.337

    $2.337

  • 10

    $1.938

    $19.38

  • 100

    $1.54223

    $154.223

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 11384 pF @ 60 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 207.1 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 6.7mOhm @ 25A, 10V
Supplier Device Package I2PAK
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 120 V
Series -
Power Dissipation (Max) 405W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Mfr Nexperia USA Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube