PSMN4R3-30BL,118

Nexperia USA Inc.

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PSMN4R3-30BL,118

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D2PAK

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Description:

MOSFET N-CH 30V 100A D2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41.5 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	4.1mOhm @ 15A, 10V
Supplier Device Package	D2PAK
Vgs(th) (Max) @ Id	2.15V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	103W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PSMN4R3