PSMN1R9-40YSDX

Nexperia USA Inc.

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PSMN1R9-40YSDX

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Package:

LFPAK56, Power-SO8

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Description:

MOSFET N-CH 40V 200A LFPAK56

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds	6198 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.9mOhm @ 25A, 10V
Supplier Device Package	LFPAK56, Power-SO8
Vgs(th) (Max) @ Id	3.6V @ 1mA
Drain to Source Voltage (Vdss)	40 V
Series	TrenchMOS™
Power Dissipation (Max)	194W (Ta)
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PSMN1R9