PMXB65UPEZ

Nexperia USA Inc.

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PMXB65UPEZ

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Package:

DFN1010D-3

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Description:

MOSFET P-CH 12V 3.2A DFN1010D-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	634 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	72mOhm @ 3.2A, 4.5V
Supplier Device Package	DFN1010D-3
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	12 V
Series	-
Power Dissipation (Max)	317mW (Ta), 8.33W (Tc)
Package / Case	3-XDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	PMXB65