PMT200EPEX

Nexperia USA Inc.

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PMT200EPEX

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Package:

SOT-223

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Description:

MOSFET P-CH 70V 2.4A SOT223

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	822 pF @ 35 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.9 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	167mOhm @ 2.4A, 10V
Supplier Device Package	SOT-223
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	70 V
Series	TrenchMOS™
Power Dissipation (Max)	800mW (Ta)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PMT200