PMPB40SNA115
NXP USA Inc.
Product No:
PMPB40SNA115
Manufacturer:
Package:
DFN2020MD-6
Batch:
-
Datasheet:
Description:
POWER FIELD-EFFECT TRANSISTOR
Quantity:
Delivery:
Payment:
In Stock : 1000
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1000
$0.304
$304
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 612 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 4.8A, 10V |
| Supplier Device Package | DFN2020MD-6 |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain to Source Voltage (Vdss) | 60 V |
| Series | - |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Package / Case | 6-UDFN Exposed Pad |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 12.9A (Tc) |
| Mfr | NXP USA Inc. |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Bulk |
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