PMPB07R3VPX

Nexperia USA Inc.

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PMPB07R3VPX

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Package:

DFN2020M-6

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Description:

PMPB07R3VP - 12 V, P-CHANNEL TRE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2121 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.6mOhm @ 12.5A, 4.5V
Supplier Device Package	DFN2020M-6
Vgs(th) (Max) @ Id	900mV @ 250µA
Drain to Source Voltage (Vdss)	12 V
Series	TrenchMOS™
Power Dissipation (Max)	1.9W (Ta), 12.5W (Tc)
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12.5A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)