PJMB210N65EC_R2_00601

Panjit International Inc.

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TO-263

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650V/ 390MOHM / 10A/ EASY TO DRI

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1412 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	210mOhm @ 9.5A, 10V
Supplier Device Package	TO-263
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	150W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Mfr	Panjit International Inc.
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PJMB210