PHU11NQ10T,127
detaildesc

PHU11NQ10T,127

NXP USA Inc.

Product No:

PHU11NQ10T,127

Manufacturer:

NXP USA Inc.

Package:

I-Pak

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 100V 10.9A IPAK

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 14.7 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 180mOhm @ 9A, 10V
Supplier Device Package I-Pak
Vgs(th) (Max) @ Id 4V @ 1mA
Drain to Source Voltage (Vdss) 100 V
Series TrenchMOS™
Power Dissipation (Max) 57.7W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10.9A (Tc)
Mfr NXP USA Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number PHU11