PHB191NQ06LT,118

Nexperia USA Inc.

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PHB191NQ06LT,118

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Package:

D2PAK

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Description:

MOSFET N-CH 55V 75A D2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7665 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95.6 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.7mOhm @ 25A, 10V
Supplier Device Package	D2PAK
Vgs(th) (Max) @ Id	2V @ 1mA
Drain to Source Voltage (Vdss)	55 V
Series	TrenchMOS™
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Mfr	Nexperia USA Inc.
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PHB191