NTH4L020N090SC1
detaildesc

NTH4L020N090SC1

onsemi

Product No:

NTH4L020N090SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Batch:

-

Datasheet:

pdf

Description:

SILICON CARBIDE MOSFET, NCHANNEL

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 320

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $35.6915

    $35.6915

  • 10

    $31.80505

    $318.0505

  • 100

    $27.916605

    $2791.6605

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4415 pF @ 450 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 15V
Supplier Device Package TO-247-4L
Vgs(th) (Max) @ Id 4.3V @ 20mA
Drain to Source Voltage (Vdss) 900 V
Series -
Power Dissipation (Max) 484W (Tc)
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 116A (Tc)
Mfr onsemi
Vgs (Max) +22V, -8V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube
Base Product Number NTH4L02