IXTT3N200P3HV
detaildesc

IXTT3N200P3HV

IXYS

Product No:

IXTT3N200P3HV

Manufacturer:

IXYS

Package:

TO-268HV (IXTT)

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 2000V 3A TO268

Quantity:

Delivery:

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Payment:

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In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $47.31

    $47.31

  • 10

    $42.15435

    $421.5435

  • 100

    $37.000885

    $3700.0885

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 8Ohm @ 1.5A, 10V
Supplier Device Package TO-268HV (IXTT)
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 2000 V
Series Polar P3™
Power Dissipation (Max) 520W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTT3