IXTN660N04T4
detaildesc

IXTN660N04T4

IXYS

Product No:

IXTN660N04T4

Manufacturer:

IXYS

Package:

SOT-227B

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 40V 660A SOT227B

Quantity:

Delivery:

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Payment:

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In Stock : 1326

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $29.1175

    $29.1175

  • 10

    $26.8527

    $268.527

  • 100

    $22.93072

    $2293.072

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 44000 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 860 nC @ 10 V
Mounting Type Chassis Mount
Product Status Active
Rds On (Max) @ Id, Vgs 0.85mOhm @ 100A, 10V
Supplier Device Package SOT-227B
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 40 V
Series Trench
Power Dissipation (Max) 1040W (Tc)
Package / Case SOT-227-4, miniBLOC
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 660A (Tc)
Mfr IXYS
Vgs (Max) ±15V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTN660