IXTA180N10T

IXYS

Product No:

IXTA180N10T

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Package:

TO-263AA

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Description:

MOSFET N-CH 100V 180A TO263

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	6.4mOhm @ 25A, 10V
Supplier Device Package	TO-263AA
Vgs(th) (Max) @ Id	4.5V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	Trench
Power Dissipation (Max)	480W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTA180