IXFX32N100P

IXYS

Product No:

IXFX32N100P

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Package:

PLUS247™-3

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Description:

MOSFET N-CH 1000V 32A PLUS247-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	14200 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	225 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	320mOhm @ 16A, 10V
Supplier Device Package	PLUS247™-3
Vgs(th) (Max) @ Id	6.5V @ 1mA
Drain to Source Voltage (Vdss)	1000 V
Series	HiPerFET™, Polar
Power Dissipation (Max)	960W (Tc)
Package / Case	TO-247-3 Variant
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFX32