IXFT26N100XHV

IXYS

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IXFT26N100XHV

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Package:

TO-268HV (IXFT)

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Description:

MOSFET N-CH 1000V 26A TO268HV

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3290 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	113 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	320mOhm @ 500mA, 10V
Supplier Device Package	TO-268HV (IXFT)
Vgs(th) (Max) @ Id	6V @ 4mA
Drain to Source Voltage (Vdss)	1000 V
Series	HiPerFET™, Ultra X
Power Dissipation (Max)	860mW (Ta)
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	26A (Ta)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFT26