IXFN50N120SIC
detaildesc

IXFN50N120SIC

IXYS

Product No:

IXFN50N120SIC

Manufacturer:

IXYS

Package:

SOT-227B

Batch:

-

Datasheet:

pdf

Description:

SICFET N-CH 1200V 47A SOT227B

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 15

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $75.7055

    $75.7055

  • 10

    $68.6071

    $686.071

  • 100

    $61.51003

    $6151.003

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 20 V
Mounting Type Chassis Mount
Product Status Active
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
Supplier Device Package SOT-227B
Vgs(th) (Max) @ Id 2.2V @ 2mA
Drain to Source Voltage (Vdss) 1200 V
Series -
Power Dissipation (Max) -
Package / Case SOT-227-4, miniBLOC
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Mfr IXYS
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number IXFN50