IXFH60N65X2-4

IXYS

Product No:

IXFH60N65X2-4

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Package:

TO-247-4L

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Description:

MOSFET N-CH 650V 60A TO247-4L

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6300 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	108 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 10V
Supplier Device Package	TO-247-4L
Vgs(th) (Max) @ Id	5V @ 4mA
Drain to Source Voltage (Vdss)	650 V
Series	HiPerFET™, Ultra X2
Power Dissipation (Max)	780W (Tc)
Package / Case	TO-247-4
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFH60