IRFIBE30GPBF

Vishay Siliconix

Product No:

IRFIBE30GPBF

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Package:

TO-220-3

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Description:

MOSFET N-CH 800V 2.1A TO220-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	3Ohm @ 1.3A, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	800 V
Series	-
Power Dissipation (Max)	35W (Tc)
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.1A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFIBE30