IRF123
detaildesc

IRF123

International Rectifier

Product No:

IRF123

Package:

TO-3

Batch:

-

Datasheet:

-

Description:

N-CHANNEL HERMETIC MOS HEXFET

Quantity:

Delivery:

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Payment:

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In Stock : 738

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 442

    $0.646

    $285.532

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 400mOhm @ 4A, 10V
Supplier Device Package TO-3
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series -
Power Dissipation (Max) 40W (Tc)
Package / Case TO-204AA, TO-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Mfr International Rectifier
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk