GT55N06D5

Goford Semiconductor

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GT55N06D5

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8-DFN (4.9x5.75)

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Description:

N60V,RD(MAX)<8M@10V,RD(MAX)<13M@

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1988 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9mOhm @ 14A, 10V
Supplier Device Package	8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	70W (Ta)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	53A (Ta)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)