GT15J341,S4X
detaildesc

GT15J341,S4X

Toshiba Semiconductor and Storage

Product No:

GT15J341,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

PB-F DISCRETE IGBT TRANSISTOR TO

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.691

    $1.691

  • 10

    $1.40125

    $14.0125

  • 100

    $1.11511

    $111.511

  • 500

    $0.943578

    $471.789

  • 1000

    $0.800603

    $800.603

  • 2000

    $0.76058

    $1521.16

  • 5000

    $0.731984

    $3659.92

  • 10000

    $0.70775

    $7077.5

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
Input Type Standard
Test Condition 300V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr) 80 ns
Switching Energy 300µJ (on), 300µJ (off)
Current - Collector (Ic) (Max) 15 A
Mounting Type Through Hole
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Td (on/off) @ 25°C 60ns/170ns
Supplier Device Package TO-220SIS
Current - Collector Pulsed (Icm) 60 A
Series -
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A
Package / Case TO-220-3 Full Pack
Power - Max 30 W
Mfr Toshiba Semiconductor and Storage
Package Tube
IGBT Type -