GT100N12K

Goford Semiconductor

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GT100N12K

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Package:

TO-252

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Description:

N120V,65A,RD<12M@10V,VTH2.5V~3.5

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2911 pF @ 60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	12mOhm @ 35A, 10V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	3.5V @ 250µA
Drain to Source Voltage (Vdss)	120 V
Series	-
Power Dissipation (Max)	75W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)