GT095N04D5

Goford Semiconductor

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GT095N04D5

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8-DFN (4.9x5.75)

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Description:

MOSFET N-CH 40V 54A DFN5*6-8L

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	942 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	6mOhm @ 10A, 10V
Supplier Device Package	8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	-
Power Dissipation (Max)	29.8W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	54A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)