GT035N10M
Goford Semiconductor
Product No:
GT035N10M
Manufacturer:
Package:
TO-263
Batch:
-
Datasheet:
-
Description:
N100V, 190A,RD<3.5M@10V,VTH2V~4V
Quantity:
Delivery:
Payment:
In Stock : 724
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.603
$2.603
10
$2.16315
$21.6315
100
$1.721305
$172.1305
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6188 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 10V |
| Supplier Device Package | TO-263 |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | - |
| Power Dissipation (Max) | 277W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Mfr | Goford Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
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