GC11N65F

Goford Semiconductor

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GC11N65F

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Package:

TO-220F

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Description:

N650V,RD(MAX)<360M@10V,VTH2.5V~4

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Operating Temperature	-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds	901 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Supplier Device Package	TO-220F
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	31.3W
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A
Mfr	Goford Semiconductor
Vgs (Max)	±30V
Package	Tube