GC041N65QF

Goford Semiconductor

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GC041N65QF

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Package:

TO-247

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Description:

MOSFET N-CH 650V 70A TO-247

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7650 pF @ 380 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	41mOhm @ 38A, 10V
Supplier Device Package	TO-247
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	500W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube