GAN080-650EBEZ

Nexperia USA Inc.

Product No:

GAN080-650EBEZ

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Package:

DFN8080-8

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Description:

650 V, 80 MOHM GALLIUM NITRIDE (

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 6 V
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Rds On (Max) @ Id, Vgs	80mOhm @ 8A, 6V
Supplier Device Package	DFN8080-8
Vgs(th) (Max) @ Id	2.5V @ 30.7mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	240W (Ta)
Package / Case	8-VDFN Exposed Pad
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	29A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	+7V, -6V
Drive Voltage (Max Rds On, Min Rds On)	6V
Package	Tape & Reel (TR)
Base Product Number	GAN080