GA03JT12-247
GeneSiC Semiconductor
Product No:
GA03JT12-247
Manufacturer:
Package:
TO-247AB
Batch:
-
Datasheet:
Description:
TRANS SJT 1200V 3A TO247AB
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
User Guide
| Operating Temperature | 175°C (TJ) |
| FET Feature | - |
| FET Type | - |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 3A |
| Supplier Device Package | TO-247AB |
| Vgs(th) (Max) @ Id | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Series | - |
| Power Dissipation (Max) | 15W (Tc) |
| Package / Case | TO-247-3 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) (95°C) |
| Mfr | GeneSiC Semiconductor |
| Vgs (Max) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Package | Tube |
Recommended Parts
GA03JT12-247 Related Blog
Purchase must see! Electronic component selection from entry to give up
2024-10-24 39
Basic knowledge of crystal vibration, circuit design, non-vibration reasons, circuit principle, crystal frequency, digital circuit application (crystal vibration data download)
2024-04-08 96
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 44
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 31
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号