G70P02K

Goford Semiconductor

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G70P02K

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Package:

TO-252

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Description:

P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.5mOhm @ 20A, 4.5V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	15 V
Series	-
Power Dissipation (Max)	70W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)