G66
detaildesc

G66

Goford Semiconductor

Product No:

G66

Manufacturer:

Goford Semiconductor

Package:

6-DFN (2x2)

Batch:

-

Datasheet:

pdf

Description:

P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4275

    $0.4275

  • 10

    $0.30305

    $3.0305

  • 100

    $0.153045

    $15.3045

  • 500

    $0.135622

    $67.811

  • 1000

    $0.105545

    $105.545

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 4 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 45mOhm @ 4.1A, 4.5V
Supplier Device Package 6-DFN (2x2)
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 16 V
Series G
Power Dissipation (Max) 1.7W (Ta)
Package / Case 6-WDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta)
Mfr Goford Semiconductor
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)