G45P02D3

Goford Semiconductor

Product No:

G45P02D3

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Package:

8-DFN (3.15x3.05)

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Description:

P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<

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Operating Temperature	-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9.5mOhm @ 10A, 4.5V
Supplier Device Package	8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	80W
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	45A
Mfr	Goford Semiconductor
Vgs (Max)	±12V
Package	Tape & Reel (TR)