G3R75MT12J
detaildesc

G3R75MT12J

GeneSiC Semiconductor

Product No:

G3R75MT12J

Manufacturer:

GeneSiC Semiconductor

Package:

TO-263-7

Batch:

-

Datasheet:

pdf

Description:

SIC MOSFET N-CH 42A TO263-7

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 15 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V
Supplier Device Package TO-263-7
Vgs(th) (Max) @ Id 2.69V @ 7.5mA
Drain to Source Voltage (Vdss) 1200 V
Series G3R™
Power Dissipation (Max) 224W (Tc)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Mfr GeneSiC Semiconductor
Vgs (Max) ±15V
Drive Voltage (Max Rds On, Min Rds On) 15V
Package Tube
Base Product Number G3R75