G350P02LLE

Goford Semiconductor

Product No:

G350P02LLE

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Package:

SOT-23-6L

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Description:

P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1126 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	35mOhm @ 4A, 4.5V
Supplier Device Package	SOT-23-6L
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1.4W (Tc)
Package / Case	SOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)